To Study And Plot The BJT Characteristics In Common Emitter Configuration

A BJT is a three terminal two – junction semiconductor device in which the conduction is due to both the charge carrier. Hence it is a bipolar device and it amplifier the sine waveform as they are transferred from input to output. BJT is classified into two types – NPN or PNP. A NPN transistor consists of two N types in between which a layer of P is sandwiched. The transistor consists of three terminal emitter, collector and base. The emitter layer is the source of the charge carriers and it is heartily doped with a moderate cross sectional area. The collector collects the charge carries and hence moderate doping and large cross sectional area. The base region acts a path for the movement of the charge carriers. In order to reduce the recombination of holes and electrons the base region is lightly doped and is of hollow cross sectional area. Normally the transistor operates with the EB junction forward biased. In transistor, the current is same in both junctions, which indicates that there is a transfer of resistance between the two junctions. Hence known as transfer resistance of transistor.

Download Files

lab-session-09.pdf (0.21 MB )