This subject is intended to provide students with the fundamentals of semiconductor physics and its application to common semiconductor devices. The course starts with an in-depth look at the theory of semiconductors including energy gap, mobility of electrons and holes, influence of temperature on conductivity, doping, photoconductivity, drift and diffusion of charge carriers and the ideal diode equation, diode models. Then, properties of the abrupt p-n junction are studied and applied to various practical devices including the signal diode, zener diode, varactor diode, photo-diode, light-emitting diode, bipolar junction transistor, and finally field effect transistors. Moreover application of diode as rectifier, clipper and clampers are studied in it. BJTs and FETs along with its biasing, types and configurations are studied in detail in the course. The course has a strong laboratory component. About half the experiments illustrate fundamental properties of semiconductor materials and half explore the characteristics and properties of a variety of semiconductor devices.

Prerequisite:                     Nil

CataLog Data:                Course Code:                             EE_221/B.Sc. ME 04

                                         Course Title:                              Electronics Engineering

                                         Credit Hours:                             2

                                         Course Designation:                 Core/Elective

                                         No of Sessions per week:         1 (Total 16 sessions)

                                         Session Duration:                      120 min

                                         Compulsory/Elective                  Compulsory (Breadth)

                                         Time of Class Meeting:              10:00 AM - 12:00 PM (Wednesday) 

Program Learning Outcome:       This course is designed in conjunction with the following PLOs.

PLO 1. Engineering Knowledge: An ability to apply knowledge of mathematics, science, engineering fundamentals and an engineering specialization to the solution of complex engineering problems.

Course Learning Outcome (CLO):            

Upon successful completion of this course, the student will be able to:

CLO 1. Describe the basics of semiconductor devices, PN junction, diodes and its models [Congnitive-2]

CLO 2. Analyze the diode application based circuits [Cognitive-4]

CLO 3. Describe the basics of BJTs and its different configurations [Cognitive-2]

CLO 4. Describe the basics of FETs and its different configurations [Cognitive-2]

Mapping of CLOs to PLOs and Learning  Domains:           

Course Learning Outcome

Program Learning Outcome

Learning Domain

CLO-1

PLO-1

Cognitive 2 (Understand)

CLO-2

PLO-1

Cognitive 4  (analyze)

CLO-3

PLO-1

Cognitive 2  (Understand)

CLO-4

PLO-1

Cognitive 2  (Understand)

Recommended Textbook:

  1. Thomas ,Floyd, “Electronic Devices Conventional current version”, 9th edition.                               

References: 

  1. Robert Boylested and Louis Nashelsky, “Electronics Devices and circuits Theory,” Ninth edition, 2006, Parentice Hall.
  2. “Electronics devices and circuits”, By Theodore and Bogart 3rd edition.
  3. Robert Paynter, “ Introductory Electronic devices and circuits: Electron Flow Version,” seventh edition, 2006, Parentice Hall.

Evaluation Criteria:        

1. Quizzes/assignments                 20%

2. Mid-Term Exam                          30%

3. Final Exam                                 50%

Course Professional Outcome/ Industrial Usage:                              

Course provides details and introduction to many basic semiconductor based components that have vast applications and usage from industrial perspective.

Course Outline and  Sessions Breakdown:           

Topics covered in the

course and level of

coverage

Introduction to semiconductor theory, PN junction, Diode and its characteristics, breakdown voltage ,diode models , special purpose diode

6 hours

Diode applications: Rectifiers, clippers,clampers

8 hours

Introduction to BJT, characteristics and parameters, DC biasing, load line  Q point

6 hours

BJT as an amplifier and as switch

BJT configurations CC CB CE

4 hours

Introduction to FETs, types, biasing techniques, confiigurations

6 hours

Program learning outcomes and how they are covered by specific course outcomes

 

Detailed Contents

CLO

PLO

Semiconductor Devices, intrinsic and extrinsic materials, P-type and N-type materials

CLO-1

PLO-1

PN junction , diode, diode models, diode forward and reverse x-istics, breakdown voltage

CLO-1

PLO-1

Semiconductor Diodes: Photodiode, Schottky barrier diode, Zener diode

CLO-1

PLO-1

Diode applications: Rectification                 

Half wave rectifier

Full wave center tapped rectifier

CLO-2

PLO-1

Diode applications: Rectification                 

Full wave bridge rectifier

CLO-2

PLO-1

Diode applications: Clippers series

CLO-2

PLO-1

Clampers, parallel clippers

CLO_2

PLO-1

Mid Exams

 

 

Basics of BJTs and working principle

CLO-3

PLO-1

BJT characteristics and basic parameters

CLO-3

PLO-1

DC biasing of BJT using voltage divider circuit , Load line and Q point

CLO-3

PLO-1

BJT as an amplifier and as switch

CLO-3

PLO-1

BJT configurations: CE, CB, CC configurations

CLO-3

PLO-1

Basic of FET and working principle

FET types: JFET(N TYPE, P TYPE) , MOSFET( E-MOS, D-MOS)

CLO-4

PLO-1

DC biasing of FET(JFET (self bias, voltage divider bias), MOSFET(drain feedback bias, voltage divider bias))

CLO-4

PLO-1

FET configurations; CD,CG,CS configurations and their comparison

CLO-4

PLO-1

Course Material