This subject is intended to provide students with the fundamentals of semiconductor physics and its application to common semiconductor devices. The course starts with an in-depth look at the theory of semiconductors including energy gap, mobility of electrons and holes, influence of temperature on conductivity, doping, photoconductivity, drift and diffusion of charge carriers and the ideal diode equation, diode models. Then, properties of the abrupt p-n junction are studied and applied to various practical devices including the signal diode, zener diode, varactor diode, photo-diode, light-emitting diode, bipolar junction transistor, and finally field effect transistors. Moreover application of diode as rectifier, clipper and clampers are studied in it. BJTs and FETs along with its biasing, types and configurations are studied in detail in the course. The course has a strong laboratory component. About half the experiments illustrate fundamental properties of semiconductor materials and half explore the characteristics and properties of a variety of semiconductor devices.
Prerequisite: Nil
CataLog Data: Course Code: EE_221/B.Sc. ME 04
Course Title: Electronics Engineering
Credit Hours: 2
Course Designation: Core/Elective
No of Sessions per week: 1 (Total 16 sessions)
Session Duration: 120 min
Compulsory/Elective Compulsory (Breadth)
Time of Class Meeting: 10:00 AM - 12:00 PM (Wednesday)
Program Learning Outcome: This course is designed in conjunction with the following PLOs.
PLO 1. Engineering Knowledge: An ability to apply knowledge of mathematics, science, engineering fundamentals and an engineering specialization to the solution of complex engineering problems.
Course Learning Outcome (CLO):
Upon successful completion of this course, the student will be able to:
CLO 1. Describe the basics of semiconductor devices, PN junction, diodes and its models [Congnitive-2]
CLO 2. Analyze the diode application based circuits [Cognitive-4]
CLO 3. Describe the basics of BJTs and its different configurations [Cognitive-2]
CLO 4. Describe the basics of FETs and its different configurations [Cognitive-2]
Mapping of CLOs to PLOs and Learning Domains:
Course Learning Outcome |
Program Learning Outcome |
Learning Domain |
CLO-1 |
PLO-1 |
Cognitive 2 (Understand) |
CLO-2 |
PLO-1 |
Cognitive 4 (analyze) |
CLO-3 |
PLO-1 |
Cognitive 2 (Understand) |
CLO-4 |
PLO-1 |
Cognitive 2 (Understand) |
Recommended Textbook:
References:
Evaluation Criteria:
1. Quizzes/assignments 20%
2. Mid-Term Exam 30%
3. Final Exam 50%
Course Professional Outcome/ Industrial Usage:
Course provides details and introduction to many basic semiconductor based components that have vast applications and usage from industrial perspective.
Course Outline and Sessions Breakdown:
Topics covered in the course and level of coverage |
Introduction to semiconductor theory, PN junction, Diode and its characteristics, breakdown voltage ,diode models , special purpose diode |
6 hours |
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Diode applications: Rectifiers, clippers,clampers |
8 hours |
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Introduction to BJT, characteristics and parameters, DC biasing, load line Q point |
6 hours |
||||
BJT as an amplifier and as switch BJT configurations CC CB CE |
4 hours |
||||
Introduction to FETs, types, biasing techniques, confiigurations |
6 hours |
||||
Program learning outcomes and how they are covered by specific course outcomes
|
Detailed Contents |
CLO |
PLO |
||
Semiconductor Devices, intrinsic and extrinsic materials, P-type and N-type materials |
CLO-1 |
PLO-1 |
|||
PN junction , diode, diode models, diode forward and reverse x-istics, breakdown voltage |
CLO-1 |
PLO-1 |
|||
Semiconductor Diodes: Photodiode, Schottky barrier diode, Zener diode |
CLO-1 |
PLO-1 |
|||
Diode applications: Rectification Half wave rectifier Full wave center tapped rectifier |
CLO-2 |
PLO-1 |
|||
Diode applications: Rectification Full wave bridge rectifier |
CLO-2 |
PLO-1 |
|||
Diode applications: Clippers series |
CLO-2 |
PLO-1 |
|||
Clampers, parallel clippers |
CLO_2 |
PLO-1 |
|||
Mid Exams |
|
|
|||
Basics of BJTs and working principle |
CLO-3 |
PLO-1 |
|||
BJT characteristics and basic parameters |
CLO-3 |
PLO-1 |
|||
DC biasing of BJT using voltage divider circuit , Load line and Q point |
CLO-3 |
PLO-1 |
|||
BJT as an amplifier and as switch |
CLO-3 |
PLO-1 |
|||
BJT configurations: CE, CB, CC configurations |
CLO-3 |
PLO-1 |
|||
Basic of FET and working principle FET types: JFET(N TYPE, P TYPE) , MOSFET( E-MOS, D-MOS) |
CLO-4 |
PLO-1 |
|||
DC biasing of FET(JFET (self bias, voltage divider bias), MOSFET(drain feedback bias, voltage divider bias)) |
CLO-4 |
PLO-1 |
|||
FET configurations; CD,CG,CS configurations and their comparison |
CLO-4 |
PLO-1 |