This subject is intended to provide students with the fundamentals of semiconductor physics and its application to common semiconductor devices. The course starts with an in-depth look at the theory of semiconductors including energy gap, mobility of electrons and holes, influence of temperature on conductivity, doping, photoconductivity, drift and diffusion of charge carriers and the ideal diode equation, diode models. Then, properties of the abrupt p-n junction are studied and applied to various practical devices including the signal diode, zener diode, varactor diode, photo-diode, light-emitting diode, bipolar junction transistor, and finally field effect transistors. Moreover application of diode as rectifier, clipper and clampers are studied in it. BJTs and FETs along with its biasing, types and configurations are studied in detail in the course. OP-AMP based circuits vastly used in different applications are studied.

Prerequisite:                     Nil

CataLog Data:                   Course Code:                               ET_121/B.Sc. Electrical Technology 2nd semester

                                            Course Title:                                Basic Electronics

                                            Credit Hours:                               3

                                            Course Designation:                   Core/Elective Core

                                            No of Sessions per week:          1 (Total 16 sessions)

                                            Session Duration:                       90 min

                                            Compulsory/Elective                  Compulsory (Breadth)

                                            Time of Class Meeting:              02:00 – 05:00 PM  Monday

Course Learning Outcome (CLO):            

Upon successful completion of this course, the student will be able to describe the basics of semiconductor devices, PN junction, diodes and its models, analyze the diode application based circuits ,describe the basics of BJTs and its different configurations, describe the basics of FETs and its different configurations and study and analyze the OP-AMP based circuits like summer, differentiator, inverting and non-inverting configurations etc.

Recommended Textbook:

  1. Thomas ,Floyd, “Electronic Devices Conventional current version”, 9th edition.                               

References: 

  1. Robert Boylested and Louis Nashelsky, “Electronics Devices and circuits Theory,” Ninth edition, 2006, Parentice Hall.
  2. “Electronics devices and circuits”, By Theodore and Bogart 3rd edition.
  3. Robert Paynter, “ Introductory Electronic devices and circuits: Electron Flow Version,” seventh edition, 2006, Parentice Hall.

Evaluation Criteria:        

1. Quizzes/assignments                 20%

2. Mid-Term Exam                          30%

3. Final Exam                                 50%

Course Outline and  Sessions Breakdown:           

Topics covered in the   course and level of coverage

Introduction to semiconductor theory, PN junction, Diode and its characteristics, breakdown voltage ,diode models , special purpose diode

(9 hours)

Diode applications: Rectifiers, clippers, clampers

(9 hours)

Introduction to BJT, characteristics and parameters, DC biasing, load line  Q point

(9 hours)

BJT as an amplifier and as switch

BJT configurations CC CB CE

 (6 hours)

Introduction to FETs, types, biasing techniques, configurations

( 6 hours)

OP-AMP introduction, inverting ,non-inverting configurations

Summer, subtractor, differentiator ,comparator etc. OP-AMP based circuits

(6 hours)

Course Contents

 

Detailed Contents

Semiconductor Devices, intrinsic and extrinsic materials, P-type and N-type materials

PN junction , diode, diode models, diode forward and reverse x-istics, breakdown voltage

Semiconductor Diodes: Photodiode, Schottky barrier diode, Zener diode

Diode applications: Rectification                 

Half wave rectifier

Full wave center tapped rectifier

Diode applications: Rectification                 

Full wave bridge rectifier

Diode applications: Clippers series/parallel, clampers

Basics of BJTs and working principle

BJT characteristics and basic parameters

Mid Exams

DC biasing of BJT using voltage divider circuit , Load line and Q point

BJT as an amplifier and as switch

BJT configurations: CE, CB, CC configurations

Basic of FET and working principle

FET types: JFET(N TYPE, P TYPE) , MOSFET( E-MOS, D-MOS)

DC biasing of FET(JFET (self bias, voltage divider bias), MOSFET(drain feedback bias, voltage divider bias))

FET configurations; CD,CG,CS configurations and their comparison

Introduction to OP-AMP inverting and non inverting configurations

OP-AMP based circuits vastly used in different applications

Course Material